In this paper a new design of MMIC based LNA is outlined .
This design uses a discrete 100-nm InP HEMT placed in front of an existing InP MMIC LNA to lower the overall noise temperature of the LNA .
This new approach known as the Transistor in front of MMIC ( T+MMIC ) LNA , possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K compared to 14.5 K for the equivalent MMIC-only LNA measured across a 27–33 GHz bandwidth at a physical temperature of 8 K. A simple ADS model offering further insights into the operation of the LNA is also presented and a potential radio astronomy application is discussed .